Thermally stable Schottky contacts on n-type GaN using ZrB2
نویسندگان
چکیده
The electrical properties and thermal stability of ZrB2 Schottky contacts deposited on n-type GaN have been studied. As-deposited contacts had a barrier height of 0.80 eV, which decreased to 0.7 eV after annealing at 300 °C, and to 0.6 eV after additional annealing at 400 °C in nitrogen for 20 min. However, the barrier height remained at about 0.6 eV even when the diodes were annealed at 600 °C for 20 min. The Rutherford backscattering spectra of annealed contacts showed no reaction at the ZrB2/GaN interface. These results make ZrB2/GaN Schottky contacts attractive for high temperature device applications. © 2006 American Institute of Physics. DOI: 10.1063/1.2199611
منابع مشابه
Improved Schottky Contacts on n-Type 4H-SiC Using ZrB2 Deposited at High Temperatures
1.—Department of Physics and Astronomy, Youngstown State University, Youngstown, OH 44555, USA. 2.—Department of Physics, Georgia Southern University, Statesboro, GA 30460, USA. 3.—Department of Physics, Auburn University, Auburn, AL 36849, USA. 4.—Present address: Department of Materials Science and Engineering, University of Illinois at Urbana– Champaign, Urbana, IL 61801, USA. 5.—e-mail: tno...
متن کاملSchottky barrier heights of metal contacts to n-type gallium nitride with low-temperature-grown cap layer
The Schottky barrier heights of metal contacts, including WSi0.8, Cr, Ti, Pt, and Ni, on n-type gallium nitride GaN with a GaN cap layer grown at low-temperature LTG were studied. Higher barriers can be formed by introducing LTG GaN on top of the conventional structures. The higher Schottky barrier observed in samples with the LTG GaN cap layer may be due to the facts that the high-resistivity ...
متن کاملOrigin and microscopic mechanism for suppression of leakage currents in Schottky contacts to GaN grown by molecular-beam epitaxy
Dislocation-related conduction paths in n-type GaN grown by molecular-beam epitaxy and a mechanism for local suppression of current flow along these paths are analyzed using conductive atomic force microscopy, scanning Auger spectroscopy, and macroscopic current–voltage measurements. Application of an electric field at the GaN surface in an ambient atmospheric environment is shown to lead to lo...
متن کاملBreakdown Enhancement Voltage of Algan/Gan Hemts with Schottky and OHMIC Drain Contacts
In present scenario high voltage AlGaN/GaN High Electron Mobility Transistors (HEMTs) on Si substrate with Schottky drain contacts were simulated to increase the breakdown voltage by replacing the conventional Ohmic drain contacts. A significant increase in breakdown voltage values was achieved for nonannealed Schottky contacts by elimination of metal spikes underneath drain electrodes. The bre...
متن کاملFabrication of GaN-based nanoscale device structures utilizing focused ion beam induced Pt deposition
In this work we have demonstrated nanoscale GaN device structures made from individual GaN nanowires and electrical contacts utilizing focused ion beam FIB induced Pt deposition. These GaN nanowires were grown by direct reaction of Ga vapor with NH3 and had diameters ranging from 100 nm to 250 nm and lengths up to 200 m. As-grown nanowires were dispersed on SiO2 coated p++ Si substrate. A 30 ke...
متن کامل